PART |
Description |
Maker |
IRGPC50FD2 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V,Ic=39A)
|
IRF International Rectifier
|
APT6045CVR APT5024BVFR |
POWER MOS V 600V 11.8A 0.450 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT6037HVR |
POWER MOS V 600V 15.5A 0.370 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT6045SVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 600V 15A 0.450 Ohm
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
APT6020LVR |
POWER MOS V 600V 30A 0.200 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT6025BVR |
POWER MOS V 600V 25A 0.250 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT6015LVFR |
POWER MOS V 600V 38A 0.150 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT6013B2LL APT6013LLL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. POWER MOS V 600V 43A 0.130 Ohm
|
Advanced Power Technology
|
APT6025BLL APT6025SLL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. POWER MOS 7 600V 24A 0.250 Ohm
|
Advanced Power Technology
|
APT6017B2LL APT6017LLL |
POWER MOS 7 600V 35A 0.170 Ohm Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
2SK2792 A5800302 |
Transistors > MOS FET > Power MOS FET From old datasheet system Switching (600V, 4A)
|
ROHM
|
AOD7S60 |
600V 7A a MOS Power Transistor
|
Alpha & Omega Semiconductors
|